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Vertical Double-diffused MOSFET Transistor CS2N60

Category: Transistors
Mosfet

A simple continuous analytical model is developed for the drain current of unipolar junction dual material double gate MOSFET (UJDMDG). The model is based on electrostatic potentials obtained from. This paper presents a study of Double Gate MOSFET. The design possibilities of the Double Gate MOSFET will be explored in this paper which operates efficiently in sub threshold region to achieve ultra-low power and increases the performance of the circuit. The main objective of this paper is to understand the structure of Double Gate MOSFET while comparing them with traditional bulk MOSFET.

Specifications

Description

Ultra low gate charge
Low reverse transfer Capacitance

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Fast switching capability
High ruggedness GateMoses
MOSFET

The CS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time,low gate charge,lou on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed swiching applications in power suplies,PWM motor controls,high efficient DC to DC converters and bridge circuits.

VDSS

VGS=0V, ID=250 uA

600

V

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VGS=10V, ID=1.5A

4.5

Ω

VGS(th)

VDS= VGS, ID=250μA

2

4

V

a

y21S

VDS= 15V, ID=1.5A The forum of field traning 1ali  .

1.4

S

IDSS

VDS= 600V ,VGS=0V

1

μA

IGSS

VGS=±30V

±100

nA

td(off) a

ID = 2.0A, VDD = 300V VGS = 10V, RG = 18

30

nS

CiSS

VGS = 0V VDS = 25V

f = 1.0MHz

330

pF Download free skin irritation estrogen patch software.

a

VSD

IS=2.0A, VGS=0V

1.5

V

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